Effect of Non-Ideal Cross-Sectional Shape on the Performance of Nanosheet-Based FETs

In this article, the effects of non-ideal cross-sectional shapes stacked nanosheet FET (NSFET) and with inter-bridge channel (TreeFET) are studied through calibrated 3D TCAD simulations. The impact on electrical characteristics due to insufficient/excessive etch processes investigated in terms inner spacer (IS), (NS) channel, (IB) channel. Simulation results show that geometry material IS have significant performance NSFET. Compared rectangular (RIS), low-k crescent (CIS) enhances gate control capability while high-k CIS degrades drain-induced barrier lowering (DIBL) reduces capacitance (Cgg). tapered NS improves short-channel (SCEs), but sacrifices driving current. For TreeFET, considering fin angle concave arc, IB can degrade capability, SCEs degradation is severe compared ideal structure. Therefore, a NSFET-based This research provides development guidelines for process structure optimization advanced transistor technology nodes.